ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES
文献类型:期刊论文
作者 | ZHANG, YH ; JIANG, DS ; LI, F ; WU, RH ; ZHOU, JM ; MEI, XB |
刊名 | PHYSICAL REVIEW B
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出版日期 | 1993 |
卷号 | 48期号:16页码:12296 |
关键词 | GAAS-GAALAS SUPERLATTICES QUANTUM-WELL STRUCTURES SEMICONDUCTOR SUPERLATTICES INDUCED LOCALIZATION BLUE SHIFT BISTABILITY ABSORPTION |
ISSN号 | 0163-1829 |
通讯作者 | ZHANG, YH: CHINESE ACAD SCI,NATL LAB SUPERLATTICES & MICROSTRUCT,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA. |
中文摘要 | We have investigated the Wannier-Stark effect in GaAs/GaAl1-xAs superlattices under electric fields by photocurrent spectroscopy measurements in the range of temperatures 10-300 K. The linewidth of the Oh Stark-ladder exciton was found to increase significantly along with an increase in peak intensity when the electric field increases. We present a mechanism based on an enhanced interface roughness scattering of electronic states due to Wannier-Stark localization in order to explain this increased broadening with electric field. This electric-field-related scattering mechanism will weaken the negative differential conductance effects in superlattices predicted by Esaki and Tsu. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/36983] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | ZHANG, YH,JIANG, DS,LI, F,et al. ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES[J]. PHYSICAL REVIEW B,1993,48(16):12296. |
APA | ZHANG, YH,JIANG, DS,LI, F,WU, RH,ZHOU, JM,&MEI, XB.(1993).ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES.PHYSICAL REVIEW B,48(16),12296. |
MLA | ZHANG, YH,et al."ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES".PHYSICAL REVIEW B 48.16(1993):12296. |
入库方式: OAI收割
来源:物理研究所
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