Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films
文献类型：期刊论文
| 作者 | Liao, ZL ; Gao, P ; Meng, Y ; Fu, WY ; Bai, XD ; Zhao, HW ; Chen, DM |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2012 |
| 卷号 | 72页码:4 |
| 关键词 | OXIDES MEMORIES CERIA |
| ISSN号 | 0038-1101 |
| 通讯作者 | Liao, ZL: Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70810 USA. |
| 中文摘要 | We have studied the electrode effect on the resistive switching behavior in the single crystalline films of CeO2 grown on Nb-SrTiO3. The fabricated devices with the top electrode made of non-reactive metals (Ag, Au, Pt) show bipolar resistive switching but are volatile. In contrast, the devices with top electrodes made of reactive metals (Al, Ta,Ti) present different bipolar resistive switching direction and are non-volatile, with Ta one having the best in OFF/ON switching ratio. The devices with these kinds of electrodes also exhibit remarkably different rectification behavior because of the difference of electrode/CeO2 interface formation. These results demonstrate that it is possible to improve the performance of resistive switching by electrode engineering. (c) 2011 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | Chinese Academy of Sciences [KJCX2-SW-W26]; National Natural Science Foundation of China [90406017]; US DOE [DOE DE-SC0002136] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37021]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liao, ZL,Gao, P,Meng, Y,et al. Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films[J]. SOLID-STATE ELECTRONICS,2012,72:4. |
| APA | Liao, ZL.,Gao, P.,Meng, Y.,Fu, WY.,Bai, XD.,...&Chen, DM.(2012).Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films.SOLID-STATE ELECTRONICS,72,4. |
| MLA | Liao, ZL,et al."Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films".SOLID-STATE ELECTRONICS 72(2012):4. |
入库方式： OAI收割
来源：物理研究所
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