Electroluminescence of an n-ZnO/p-GaN heterojunction under forward and reverse biases
文献类型：期刊论文
| 作者 | Qin, Q ; Guo, LW ; Zhou, ZT ; Chen, H ; Du, XL ; Mei, ZX ; Jia, JF ; Xue, QK ; Zhou, JM |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:9页码:2298 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION MG-DOPED GAN DETECTED MAGNETIC-RESONANCE LIGHT-EMITTING-DIODES ROOM-TEMPERATURE PHOTOLUMINESCENCE FILMS FABRICATION BAND DEPENDENCE |
| ISSN号 | 0256-307X |
| 通讯作者 | Zhou, JM: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | We investigate the carrier envelope phase (CEP) effects on high-order harmonic generation (HHG) in ultrashort pulses with the pulse duration 2.5 fs when the laser intensity is high enough so that the initial state is ionized effectively during the laser pulse but remains about 20% population at the end of the laser pulse. We End that the ionization process of the initial state is very sensitive to the CEP during the laser pulse. The ionization process of the initial state determines the continuum state population and hence influences dramatically the weights of the classical trajectories that contribute to HHG. In such a case we can not predict the cutoff and the structure of the harmonic spectrum only by the number and the kinetic energy of the classical trajectories. The harmonic spectrum exhibits abundant characters for different CEP cases. As a result, we can control the cutoff frequency and the plateau structure of the harmonic spectrum with CEP by controlling the time behaviour of the ionization of the initial state. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37029]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Qin, Q,Guo, LW,Zhou, ZT,et al. Electroluminescence of an n-ZnO/p-GaN heterojunction under forward and reverse biases[J]. CHINESE PHYSICS LETTERS,2005,22(9):2298. |
| APA | Qin, Q.,Guo, LW.,Zhou, ZT.,Chen, H.,Du, XL.,...&Zhou, JM.(2005).Electroluminescence of an n-ZnO/p-GaN heterojunction under forward and reverse biases.CHINESE PHYSICS LETTERS,22(9),2298. |
| MLA | Qin, Q,et al."Electroluminescence of an n-ZnO/p-GaN heterojunction under forward and reverse biases".CHINESE PHYSICS LETTERS 22.9(2005):2298. |
入库方式： OAI收割
来源：物理研究所
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