Electron affinity and effect of annealing on heavily boron-doped diamond films
文献类型：期刊论文
| 作者 | Wong, KW ; Lee, ST ; Lin, ZD ; Lam, YW ; Kwok, RWM |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
 |
| 出版日期 | 1999 |
| 卷号 | 38期号:2A页码:791 |
| 关键词 | SURFACE |
| ISSN号 | 0021-4922 |
| 通讯作者 | Wong, KW: City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong. |
| 中文摘要 | A series of heavily boron-doped polycrystalline diamond films was studied. It was found that the electron affinity of the diamond surfaces increased with increasing doping concentration and the Fermi level was pinned at similar to 0.35 eV above the valence band maximum (VBM). After annealing at similar to 500 degrees C, the electron affinity of all samples decreased and the Fermi level increased to 0.87 eV. These changes were concurrent with a decrease in the concentration of both boron and oxygen, and an increase in that of BxOy relative to elemental boron on the diamond surfaces. A model was proposed to explain the dependence of electron affinity on boron concentration, and to explain other changes observed upon annealing. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37049]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wong, KW,Lee, ST,Lin, ZD,et al. Electron affinity and effect of annealing on heavily boron-doped diamond films[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,1999,38(2A):791. |
| APA | Wong, KW,Lee, ST,Lin, ZD,Lam, YW,&Kwok, RWM.(1999).Electron affinity and effect of annealing on heavily boron-doped diamond films.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,38(2A),791. |
| MLA | Wong, KW,et al."Electron affinity and effect of annealing on heavily boron-doped diamond films".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38.2A(1999):791. |
入库方式： OAI收割
来源：物理研究所
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