Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process
文献类型：期刊论文
| 作者 | Yang, HF ; Jin, AZ ; Luo, Q ; Li, JJ ; Gu, CZ ; Cui, Z |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2008 |
| 卷号 | 85期号:5-6页码:814 |
| 关键词 | HYDROGEN SILSESQUIOXANE CONTRAST STACK |
| ISSN号 | 0167-9317 |
| 通讯作者 | Yang, HF: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has been characterised, showing the PMMA underlayer has no effect on the exposure of HSQ. Optimum conditions for reactive ion etching of PMMA underlayer have been established. The undercut length in the PMMA layer is found near linearly dependence on etching time. Well defined undercut profile has been achieved in the HSQ/PMMA bilayer resist system, and good negative tone metal lift-off structures have been successfully produced. (C) 2008 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37052]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yang, HF,Jin, AZ,Luo, Q,et al. Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process[J]. MICROELECTRONIC ENGINEERING,2008,85(5-6):814. |
| APA | Yang, HF,Jin, AZ,Luo, Q,Li, JJ,Gu, CZ,&Cui, Z.(2008).Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process.MICROELECTRONIC ENGINEERING,85(5-6),814. |
| MLA | Yang, HF,et al."Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process".MICROELECTRONIC ENGINEERING 85.5-6(2008):814. |
入库方式： OAI收割
来源：物理研究所
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