Electron holography characterization of the electrostatic potential of thin high-kappa dielectric film embedded in gate stack
文献类型：期刊论文
| 作者 | Yao, Y ; Yang, Y ; Duan, XF ; Wang, YG ; Yu, RC ; Xu, QX |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 99期号:16 |
| 关键词 | DOPANT DISTRIBUTION DEVICES SI |
| ISSN号 | 0003-6951 |
| 通讯作者 | Yao, Y: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | The electrostatic potential of the thin high-kappa dielectric film and related interfaces embedded in the gate stack can be profiled in high spatial resolution in the wedge-shape sample. The retrieved potential uncovers the uneven distribution with a maximum 15.6 +/- 0.7V in HfLaON dielectric film. It implies the non-uniform material distribution in high-kappa thin film and physical parameter of the film, such as permittivity, should not be considered as the constant. (C) 2011 American Institute of Physics. [doi:10.1063/1.3652770] |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10974235]; Special Funds for Major State Basic Research Projects [2010CB934202, 2007CB936301] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37088]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yao, Y,Yang, Y,Duan, XF,et al. Electron holography characterization of the electrostatic potential of thin high-kappa dielectric film embedded in gate stack[J]. APPLIED PHYSICS LETTERS,2011,99(16). |
| APA | Yao, Y,Yang, Y,Duan, XF,Wang, YG,Yu, RC,&Xu, QX.(2011).Electron holography characterization of the electrostatic potential of thin high-kappa dielectric film embedded in gate stack.APPLIED PHYSICS LETTERS,99(16). |
| MLA | Yao, Y,et al."Electron holography characterization of the electrostatic potential of thin high-kappa dielectric film embedded in gate stack".APPLIED PHYSICS LETTERS 99.16(2011). |
入库方式： OAI收割
来源：物理研究所
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