Electron holography study on the microstructure of magnetic tunnelling junctions
文献类型：期刊论文
| 作者 | Xu, QY ; Wang, YG ; You, B ; Du, J ; Hu, A ; Zhang, Z |
| 刊名 | ULTRAMICROSCOPY
 |
| 出版日期 | 2004 |
| 卷号 | 98期号:2-4页码:297 |
| 关键词 | ROOM-TEMPERATURE OXIDE LAYERS MAGNETORESISTANCE INTERFACE BARRIERS FILMS |
| ISSN号 | 0304-3991 |
| 通讯作者 | Zhang, Z: Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, POB 63, Beijing 100080, Peoples R China. |
| 中文摘要 | Electron holography was applied to study the microstructure evolution of magnetic tunnelling junctions (MTJs) CoFe/AlOx/Co annealed at different temperatures. A mean inner potential barrier was observed in the as-deposited MTJ sample, while it was changed to a potential well after a 200degreesC or a 400degreesC annealing. It is suggested that the oxygen atoms were redistributed during the annealing, which left metallic atoms acting as acceptors to confine the electrons, leading to the decrease of the potential of the AlOx barrier layer. The results suggest that the electron holography may be a useful tool for the study of the microstructure of amorphous materials. (C) 2003 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37093]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xu, QY,Wang, YG,You, B,et al. Electron holography study on the microstructure of magnetic tunnelling junctions[J]. ULTRAMICROSCOPY,2004,98(2-4):297. |
| APA | Xu, QY,Wang, YG,You, B,Du, J,Hu, A,&Zhang, Z.(2004).Electron holography study on the microstructure of magnetic tunnelling junctions.ULTRAMICROSCOPY,98(2-4),297. |
| MLA | Xu, QY,et al."Electron holography study on the microstructure of magnetic tunnelling junctions".ULTRAMICROSCOPY 98.2-4(2004):297. |
入库方式： OAI收割
来源：物理研究所
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