Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two-dimensional limit
文献类型：期刊论文
| 作者 | Liu, MH ; Chang, CZ ; Zhang, ZC ; Zhang, Y ; Ruan, W ; He, K ; Wang, LL ; Chen, X ; Jia, JF ; Zhang, SC ; Xue, QK ; Ma, XC ; Wang, YY |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2011 |
| 卷号 | 83期号:16 |
| 关键词 | HGTE QUANTUM-WELLS SINGLE DIRAC CONE SURFACE-STATES THIN-FILMS BI2TE3 PHASE |
| ISSN号 | 1098-0121 |
| 通讯作者 | Liu, MH: Tsinghua Univ, Dept Phys, Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China. |
| 中文摘要 | We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown on sapphire by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The insulating behavior becomes more pronounced in thinner films. The sharp increase of resistance with magnetic field, however, indicates the existence of weak antilocalization originated from the topological protection. We show that this unusual insulating ground state in the two-dimensional limit of topological insulators is induced by the combined effect of strong electron interaction and topological delocalization. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China; Chinese Academy of Sciences; Ministry of Science and Technology of China [2009CB929400] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37098]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, MH,Chang, CZ,Zhang, ZC,et al. Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two-dimensional limit[J]. PHYSICAL REVIEW B,2011,83(16). |
| APA | Liu, MH.,Chang, CZ.,Zhang, ZC.,Zhang, Y.,Ruan, W.,...&Wang, YY.(2011).Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two-dimensional limit.PHYSICAL REVIEW B,83(16). |
| MLA | Liu, MH,et al."Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two-dimensional limit".PHYSICAL REVIEW B 83.16(2011). |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。