中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electron spin quantum beats and room temperature g factor in GaAsN

文献类型:期刊论文

作者Zhao, HM ; Lombez, L ; Liu, BL ; Sun, BQ ; Xue, QK ; Chen, DM ; Marie, X
刊名APPLIED PHYSICS LETTERS
出版日期2009
卷号95期号:4
关键词DEPENDENT RECOMBINATION SEMICONDUCTOR DYNAMICS ALLOYS
ISSN号0003-6951
通讯作者Zhao, HM: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要We report on the investigation of electron spin quantum beats at room temperature in GaAsN thin films by time-resolved Kerr rotation technique. The measurement of the quantum beats, which originate from the Larmor precession of electron spins in external transverse magnetic field, yields an accurate determination of the conduction electron g factor. We show that the g factor of GaAs(1-x)N(x) thin films is significantly changed by the introduction of a small nitrogen fraction.
收录类别SCI
资助信息Chinese-French PRA; National Science Foundation of China [PRA MX06-07, 10534030, 10774183]; National Basic Research Program of China [2006CB921300973]
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/37110]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhao, HM,Lombez, L,Liu, BL,et al. Electron spin quantum beats and room temperature g factor in GaAsN[J]. APPLIED PHYSICS LETTERS,2009,95(4).
APA Zhao, HM.,Lombez, L.,Liu, BL.,Sun, BQ.,Xue, QK.,...&Marie, X.(2009).Electron spin quantum beats and room temperature g factor in GaAsN.APPLIED PHYSICS LETTERS,95(4).
MLA Zhao, HM,et al."Electron spin quantum beats and room temperature g factor in GaAsN".APPLIED PHYSICS LETTERS 95.4(2009).

入库方式: OAI收割

来源:物理研究所

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