中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electron-hole competition in photorefractive Rb doped KNbO3

文献类型:期刊论文

作者Zhang, ZG ; Ding, Y ; Eichler, HJ ; Fu, PM ; Shen, DZ ; Ma, XY ; Chen, JY
刊名OPTICS COMMUNICATIONS
出版日期1997
卷号142期号:4-6页码:279
关键词BI12SIO20 CRYSTALS INP-FE TRANSPORT CENTERS MEDIA GAIN
ISSN号0030-4018
通讯作者Zhang, ZG: TECH UNIV BERLIN, INST OPT, STR 17 JUNI 135, D-10623 BERLIN, GERMANY.
中文摘要We report electron-hole competition in a two-beam coupling experiment in a KNbO3:Rb crystal. We found simultaneous hole and electron conduction in different crystal areas. The response times of the two processes are of the order of 500 ms and 10 ms at moderate intensity levels of 1 W/cm(2). (C) 1997 Elsevier Science B.V.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/37138]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhang, ZG,Ding, Y,Eichler, HJ,et al. Electron-hole competition in photorefractive Rb doped KNbO3[J]. OPTICS COMMUNICATIONS,1997,142(4-6):279.
APA Zhang, ZG.,Ding, Y.,Eichler, HJ.,Fu, PM.,Shen, DZ.,...&Chen, JY.(1997).Electron-hole competition in photorefractive Rb doped KNbO3.OPTICS COMMUNICATIONS,142(4-6),279.
MLA Zhang, ZG,et al."Electron-hole competition in photorefractive Rb doped KNbO3".OPTICS COMMUNICATIONS 142.4-6(1997):279.

入库方式: OAI收割

来源:物理研究所

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