Electronic behavior of superconducting SmFeAsO0.75
文献类型：期刊论文
| 作者 | Sun, Y ; Ding, Y ; Zheng, BC ; Shi, ZX ; Ren, ZA |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2011 |
| 卷号 | 109期号:8 |
| 关键词 | ARSENIDE SUPERCONDUCTORS TEMPERATURE-DEPENDENCE LAYERED SUPERCONDUCTOR CRITICAL-FIELD GAP |
| ISSN号 | 0021-8979 |
| 通讯作者 | Shi, ZX: Southeast Univ, Dept Phys, Nanjing 211189, Peoples R China. |
| 中文摘要 | High-quality polycrystalline SmFeAsO0.75 was synthesized with a superconducting transition width less than 1 K, and the electronic behavior was systematically studied by transport and specific heat measurements. An obvious superconducting jump was witnessed, together with a very small normalized superconducting jump, Delta C/gamma T-n(c) similar to 0.2, which is much smaller than expected from the BCS theory. A strong temperature-dependent Hall coefficient was found and attributed to the partial gapping of the Fermi surface up to the temperature of 160 K, which was predicted and supported by the emergence of the pseudogap. The charge-carrier density as well as the effective mass were also obtained and discussed in detail. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573667] |
| 收录类别 | SCI |
| 资助信息 | Natural Science Foundation of China [10904013]; Ministry of Science and Technology of China [2011CBA00100]; National Science Foundation of Jiangsu Province of China [BK2010421] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37145]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sun, Y,Ding, Y,Zheng, BC,et al. Electronic behavior of superconducting SmFeAsO0.75[J]. JOURNAL OF APPLIED PHYSICS,2011,109(8). |
| APA | Sun, Y,Ding, Y,Zheng, BC,Shi, ZX,&Ren, ZA.(2011).Electronic behavior of superconducting SmFeAsO0.75.JOURNAL OF APPLIED PHYSICS,109(8). |
| MLA | Sun, Y,et al."Electronic behavior of superconducting SmFeAsO0.75".JOURNAL OF APPLIED PHYSICS 109.8(2011). |
入库方式： OAI收割
来源：物理研究所
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