Electronically Nonalloyed State of a Statistical Single Atomic Layer Semiconductor Alloy
文献类型：期刊论文
| 作者 | Ebert, P ; Landrock, S ; Jiang, Y ; Wu, KH ; Wang, EG ; Dunin-Borkowski, RE |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 12期号:11页码:5845 |
| 关键词 | TUNNELING SPECTROSCOPY SI(111)2X1 SURFACE OVERLAYERS |
| ISSN号 | 1530-6984 |
| 通讯作者 | Ebert, P: Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany. |
| 中文摘要 | Using atomically and momentum resolved scanning tunneling microscopy and spectroscopy, we demonstrate that a two-dimensional (2D) root 3 x root 3 semiconducting Ga-Si single atomic alloy layer exhibits an electronic structure with atomic localization and which is different at the Si and Ga atom sites. No indication of an interaction or an electronic intermixing and formation of a new alloy band structure is present, as if no alloying happened The electronic localization is traced back to the lack of intra alloy bonds due to the 2D atomically confined structure of the alloy overlayer |
| 收录类别 | SCI |
| 资助信息 | National Basic Research Programs of China [2012CB921303]; National Science Foundation of China [11104004, 91021007]; Research Fund for the Doctoral Program of Higher Education of China [20110001120126] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37226]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ebert, P,Landrock, S,Jiang, Y,et al. Electronically Nonalloyed State of a Statistical Single Atomic Layer Semiconductor Alloy[J]. NANO LETTERS,2012,12(11):5845. |
| APA | Ebert, P,Landrock, S,Jiang, Y,Wu, KH,Wang, EG,&Dunin-Borkowski, RE.(2012).Electronically Nonalloyed State of a Statistical Single Atomic Layer Semiconductor Alloy.NANO LETTERS,12(11),5845. |
| MLA | Ebert, P,et al."Electronically Nonalloyed State of a Statistical Single Atomic Layer Semiconductor Alloy".NANO LETTERS 12.11(2012):5845. |
入库方式： OAI收割
来源：物理研究所
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