Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure
文献类型:期刊论文
作者 | Shi, JJ ; Sanders, BC ; Pan, SH |
刊名 | EUROPEAN PHYSICAL JOURNAL B
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出版日期 | 1998 |
卷号 | 4期号:1页码:113 |
关键词 | QUANTUM-WELL STRUCTURES THICKNESS ASYMMETRIES MAGNETIC-FIELD DIODES HETEROSTRUCTURES OSCILLATIONS TEMPERATURE EMISSION MODEL |
ISSN号 | 1434-6028 |
通讯作者 | Shi, JJ: Macquarie Univ, Sch Math Phys Comp & Elect, Sydney, NSW 2109, Australia. |
中文摘要 | We calculate the electron-phonon scattering rate for an asymmetric double barrier resonant tunneling structure based on dielectric continuum theory, including all phonon modes, and show that interface phonons contribute much more to the scattering rate than do bulk-like LO phonons for incident energies which are approximately within an order of magnitude of the Fermi energy. The maximum scattering rate occurs for incident electron energies near the quantum well resonance. Subband nonparabolicity has a significant influence on electron-phonon scattering in these structures. We show that the relaxation time is comparable to the dwell time of electrons in the quantum well for a typical resonant tunneling structure. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/37249] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Shi, JJ,Sanders, BC,Pan, SH. Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure[J]. EUROPEAN PHYSICAL JOURNAL B,1998,4(1):113. |
APA | Shi, JJ,Sanders, BC,&Pan, SH.(1998).Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure.EUROPEAN PHYSICAL JOURNAL B,4(1),113. |
MLA | Shi, JJ,et al."Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure".EUROPEAN PHYSICAL JOURNAL B 4.1(1998):113. |
入库方式: OAI收割
来源:物理研究所
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