中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure

文献类型:期刊论文

作者Shi, JJ ; Sanders, BC ; Pan, SH
刊名EUROPEAN PHYSICAL JOURNAL B
出版日期1998
卷号4期号:1页码:113
关键词QUANTUM-WELL STRUCTURES THICKNESS ASYMMETRIES MAGNETIC-FIELD DIODES HETEROSTRUCTURES OSCILLATIONS TEMPERATURE EMISSION MODEL
ISSN号1434-6028
通讯作者Shi, JJ: Macquarie Univ, Sch Math Phys Comp & Elect, Sydney, NSW 2109, Australia.
中文摘要We calculate the electron-phonon scattering rate for an asymmetric double barrier resonant tunneling structure based on dielectric continuum theory, including all phonon modes, and show that interface phonons contribute much more to the scattering rate than do bulk-like LO phonons for incident energies which are approximately within an order of magnitude of the Fermi energy. The maximum scattering rate occurs for incident electron energies near the quantum well resonance. Subband nonparabolicity has a significant influence on electron-phonon scattering in these structures. We show that the relaxation time is comparable to the dwell time of electrons in the quantum well for a typical resonant tunneling structure.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/37249]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Shi, JJ,Sanders, BC,Pan, SH. Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure[J]. EUROPEAN PHYSICAL JOURNAL B,1998,4(1):113.
APA Shi, JJ,Sanders, BC,&Pan, SH.(1998).Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure.EUROPEAN PHYSICAL JOURNAL B,4(1),113.
MLA Shi, JJ,et al."Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure".EUROPEAN PHYSICAL JOURNAL B 4.1(1998):113.

入库方式: OAI收割

来源:物理研究所

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