Energy-Gap Opening in a Bi(110) Nanoribbon Induced by Edge Reconstruction
文献类型：期刊论文
| 作者 | Sun, JT ; Huang, H ; Wong, SL ; Gao, HJ ; Feng, YP ; Wee, ATS |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 109期号:24 |
| 关键词 | TO-SEMICONDUCTOR TRANSITION BISMUTH THIN-FILMS ELECTRONIC-PROPERTIES GRAPHENE BI 6H-SIC(0001) SEMIMETALS RIBBONS GROWTH SB |
| ISSN号 | 0031-9007 |
| 通讯作者 | Sun, JT: Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore. |
| 中文摘要 | Scanning tunnelling microscopy and spectroscopy experiments complemented by first-principles calculations have been conducted to study the electronic structure of 4 monolayer Bi(110) nanoribbons on epitaxial graphene on silicon carbide [4H-SiC(0001)]. In contrast with the semimetal property of elemental bismuth, an energy gap of 0.4 eV is measured at the centre of the Bi(110) nanoribbons. Edge reconstructions, which can facilitate the edge strain energy release, are found to be responsible for the band gap opening. The calculated density of states around the Fermi level are decreased quickly to zero from the terrace edge to the middle of a Bi(110) nanoribbon potentially signifying a spatial metal-to-semiconductor transition. This study opens new avenues for room-temperature bismuth nanoribbon-based electronic devices. DOI: 10.1103/PhysRevLett.109.246804 |
| 收录类别 | SCI |
| 资助信息 | Singapore NRF-CRP [R-144-000-295-281, R-143-000-360-281]; NSFC, China |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37320]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sun, JT,Huang, H,Wong, SL,et al. Energy-Gap Opening in a Bi(110) Nanoribbon Induced by Edge Reconstruction[J]. PHYSICAL REVIEW LETTERS,2012,109(24). |
| APA | Sun, JT,Huang, H,Wong, SL,Gao, HJ,Feng, YP,&Wee, ATS.(2012).Energy-Gap Opening in a Bi(110) Nanoribbon Induced by Edge Reconstruction.PHYSICAL REVIEW LETTERS,109(24). |
| MLA | Sun, JT,et al."Energy-Gap Opening in a Bi(110) Nanoribbon Induced by Edge Reconstruction".PHYSICAL REVIEW LETTERS 109.24(2012). |
入库方式： OAI收割
来源：物理研究所
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