Enhanced dry etching of silicon with deuterium plasma
文献类型：期刊论文
| 作者 | Iwakuro, H ; Kuroda, T ; Shen, DH ; Lin, ZD |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 1996 |
| 卷号 | 14期号:2页码:707 |
| 关键词 | HYDROGEN CHEMISTRY SURFACES REMOVAL OXIDE ARGON IONS |
| ISSN号 | 1071-1023 |
| 中文摘要 | The etching of Si and SiO2 for H-2 and D-2 plasma exposure has been investigated. The Si is etched rapidly by a factor of 34 for D-2 plasma exposure compared with H-2 plasma exposure. On the other hand, the etching rate of SiO2 does not change. This suggests a possibility of dry etching of Si with D-2 gas. (C) 1996 American Vacuum Society. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37340]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Iwakuro, H,Kuroda, T,Shen, DH,et al. Enhanced dry etching of silicon with deuterium plasma[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1996,14(2):707. |
| APA | Iwakuro, H,Kuroda, T,Shen, DH,&Lin, ZD.(1996).Enhanced dry etching of silicon with deuterium plasma.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,14(2),707. |
| MLA | Iwakuro, H,et al."Enhanced dry etching of silicon with deuterium plasma".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 14.2(1996):707. |
入库方式： OAI收割
来源：物理研究所
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