Enhanced electron field emission from oriented AlN films
文献类型：期刊论文
| 作者 | Yue, SL ; Shi, CY ; Li, JJ ; Gu, CZ |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2006 |
| 卷号 | 99期号:9 |
| 关键词 | VAPOR-DEPOSITED DIAMOND BAND-GAP ALUMINUM EMITTERS NITRIDE TIPS SURFACES AFFINITY |
| ISSN号 | 0021-8979 |
| 通讯作者 | Gu, CZ: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | (002) and (100) oriented AlN films were deposited on silicon substrates and tungsten tips by radio frequency magnetron reactive sputtering. The electron field emission (FE) properties of (002) and (100) oriented AlN films were investigated and found to be significantly different in emission threshold and current density. The threshold electric field was only 0.14 V/mu m for (002) oriented AlN film-far lower than the threshold of 1.13 V/mu m for (100) oriented AlN film on tungsten tips. Maximum FE currents of 183 and 27 mu A were obtained for (002) and (100) oriented AlN films on tungsten tips, respectively. Comparative analysis showed that the absence of linear relation in Fowler-Nordheim plots could be attributed to the high current density integrated over the emitting areas. The excellent FE property of (002) oriented AlN film can be attributed to its vertically oriented grains and the broad distribution of defect-related subbands within its band gap as analyzed by photoluminescence spectra from (002) and (100) oriented AlN films. (C) 2006 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37345]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yue, SL,Shi, CY,Li, JJ,et al. Enhanced electron field emission from oriented AlN films[J]. JOURNAL OF APPLIED PHYSICS,2006,99(9). |
| APA | Yue, SL,Shi, CY,Li, JJ,&Gu, CZ.(2006).Enhanced electron field emission from oriented AlN films.JOURNAL OF APPLIED PHYSICS,99(9). |
| MLA | Yue, SL,et al."Enhanced electron field emission from oriented AlN films".JOURNAL OF APPLIED PHYSICS 99.9(2006). |
入库方式： OAI收割
来源：物理研究所
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