Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate
文献类型：期刊论文
| 作者 | Pei, XJ ; Guo, LW ; Wang, XH ; Wang, Y ; Jia, HQ ; Chen, H ; Zhou, JM |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 26期号:2 |
| 关键词 | MULTIPLE-QUANTUM WELLS X-RAY-DIFFRACTION GAN EMISSION SHIFT |
| ISSN号 | 0256-307X |
| 通讯作者 | Guo, LW: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | Green InGaN/GaN based light-emitting diodes (LEDs) are fabricated both on planar and wet-etched patterned sapphire substrates by metalorganic vapour phase epitaxy (MOVPE). Their photoluminescence (PL) properties of the two samples are studied. The results indicate that the PL integral intensity of the green LED on the patterned substrate is nearly two times of that on the planar one within the whole measured temperature range. The enhanced PL intensity in the green LED on the patterned substrate is shown completely contributed from the extraction efficiency, but not from the internal quantum efficiency. The conclusion is supported by temperature-dependent PL analysis on the two samples, and the mechanisms are discussed. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10574148]; National High-Technology Research and Development Programme of China [2006AA03A106, 2006AA03A107]; National Basic Research Program of China [2006CB921300] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37378]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Pei, XJ,Guo, LW,Wang, XH,et al. Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate[J]. CHINESE PHYSICS LETTERS,2009,26(2). |
| APA | Pei, XJ.,Guo, LW.,Wang, XH.,Wang, Y.,Jia, HQ.,...&Zhou, JM.(2009).Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate.CHINESE PHYSICS LETTERS,26(2). |
| MLA | Pei, XJ,et al."Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate".CHINESE PHYSICS LETTERS 26.2(2009). |
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来源：物理研究所
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