Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier
文献类型：期刊论文
| 作者 | He, SM ; Bai, HL ; Liu, GL ; Li, Q ; Yan, SS ; Chen, YX ; Mei, LM ; Liu, HF ; Wang, SG ; Han, XF |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 100期号:13 |
| ISSN号 | 0003-6951 |
| 关键词 | MODEL |
| 通讯作者 | He, SM: Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. |
| 中文摘要 | The fully epitaxial ZnO-based ZnO:Co/ZnO:Mg/ZnO:Co magnetic tunnel junctions were grown on Al2O3(0001) substrate by oxygen plasma-assisted molecular beam epitaxy. The magnetoresistance behavior and spin injection through ZnO:Mg barrier were investigated. An enhanced positive tunnel magnetoresistance ratio of 85.6% is observed at 1.8 T at 5 K. The junction resistance at zero magnetic field is linear with respect to temperature power law T-4/3 between 5 K and 70 K, indicating that carriers tunnel through ZnO: Mg barrier via two localized states. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698151] |
| 资助信息 | State Key Project of Fundamental Research of China [2009CB929202, 2009CB929203]; NSFC [10834001, 50972163] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37395]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | He, SM,Bai, HL,Liu, GL,et al. Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier[J]. APPLIED PHYSICS LETTERS,2012,100(13). |
| APA | He, SM.,Bai, HL.,Liu, GL.,Li, Q.,Yan, SS.,...&Han, XF.(2012).Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier.APPLIED PHYSICS LETTERS,100(13). |
| MLA | He, SM,et al."Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier".APPLIED PHYSICS LETTERS 100.13(2012). |
入库方式： OAI收割
来源：物理研究所
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