Enhancement of bulklike second-order nonlinear susceptibility in SiGe/Si step wells and biasing-field controlled (Si5Ge5)(100) superlattices
文献类型：期刊论文
| 作者 | Zhang, XH ; Chen, ZH ; Xuan, LZ ; Pan, SH ; Yang, GZ |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 1997 |
| 卷号 | 56期号:24页码:15842 |
| 关键词 | 2ND-HARMONIC GENERATION QUANTUM-WELL HARMONIC-GENERATION ODD-PERIOD TRANSITIONS INTERFACES |
| ISSN号 | 0163-1829 |
| 通讯作者 | Zhang, XH: Chinese Acad Sci, Inst Phys, Lab Opt Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Second-harmonic generation (SHG) from electric-field biased (Si5Ge5)(100) superlattices and Si0.75Ge0.25/Si0.57Ge0.43/Si step asymmetry wells were studied. Contributions from the different sources to second-order susceptibility chi((2)) were systematically analyzed for these two kinds of asymmetry Si/Ge quantum-well structures. The bulklike chi((2)) was large enough to be observed while the strain-induced contribution to chi((2)) was relatively small for (Si5Ge5)(100) superlattices under an applied field of 100 kV/cm. However, strain-enhanced effects were large compared to the contribution from the bulk for the optical chi((2)) in SiGe/Si step wells. The results show that different asymmetric structures have different contributional distributions of SHG sources. The peak value of chi((2)) was as large as 5 x 10(-6) esu for a (Si5Ge5)(100) superlattice under 100 kV/cm electric field and 0.6 x 10(-6) esu far SiGe/Si step wells. These large bulklike chi((2)) values indicate that Si/Ge quantum wells with asymmetric structures have potential applications to optoelectronic materials and devices with the existing Si-based technology. [S0163-1829(97)01448-3]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37404]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, XH,Chen, ZH,Xuan, LZ,et al. Enhancement of bulklike second-order nonlinear susceptibility in SiGe/Si step wells and biasing-field controlled (Si5Ge5)(100) superlattices[J]. PHYSICAL REVIEW B,1997,56(24):15842. |
| APA | Zhang, XH,Chen, ZH,Xuan, LZ,Pan, SH,&Yang, GZ.(1997).Enhancement of bulklike second-order nonlinear susceptibility in SiGe/Si step wells and biasing-field controlled (Si5Ge5)(100) superlattices.PHYSICAL REVIEW B,56(24),15842. |
| MLA | Zhang, XH,et al."Enhancement of bulklike second-order nonlinear susceptibility in SiGe/Si step wells and biasing-field controlled (Si5Ge5)(100) superlattices".PHYSICAL REVIEW B 56.24(1997):15842. |
入库方式： OAI收割
来源：物理研究所
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