Epitaxial growth and characterization of GaN Films on (001) GaAs substrates by radio-frequency molecular beam epitaxy
文献类型：期刊论文
| 作者 | Liu, HF ; Chen, H ; Wan, L ; Li, ZQ ; Huang, Q ; Zhou, JM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2001 |
| 卷号 | 227页码:390 |
| 关键词 | VAPOR-PHASE EPITAXY LIGHT-EMITTING DIODES HEXAGONAL GAN CUBIC GAN HETEROSTRUCTURE |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liu, HF: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The intermediate nucleation layer effects on the crystal structure of GaN epitaxial layers grown on GaAs (0 0 1) substrates by solid-sourer molecular beam epitaxy using RF-N-2 plasma as a nitrogen source were investigated. The crystal structure of GaN grown on (0 0 1) GaAs substrates was critically influenced by the nucleation layer, that is, mainly cubic GaN was grown directly on the GaAs substrate with the epitaxial relationship of GaN (0 0 1)//GaAs(0 0 1) and GaN[1 1 0]//GaAs[1 1 0], while hexagonal GaN was frown on a very thin AlAs intermediate layer with the epitaxial relationship of GaN(0 0 0 1)//GaAs(0 0 1) and GaN[1 1 (2) over bar 0]//GaAs[1 1 0]. X-ray diffraction and transmission-electron-microscope are used to analyze the crystal structure of the two kinds of epilayers. (C) 2001 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37486]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, HF,Chen, H,Wan, L,et al. Epitaxial growth and characterization of GaN Films on (001) GaAs substrates by radio-frequency molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2001,227:390. |
| APA | Liu, HF,Chen, H,Wan, L,Li, ZQ,Huang, Q,&Zhou, JM.(2001).Epitaxial growth and characterization of GaN Films on (001) GaAs substrates by radio-frequency molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,227,390. |
| MLA | Liu, HF,et al."Epitaxial growth and characterization of GaN Films on (001) GaAs substrates by radio-frequency molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 227(2001):390. |
入库方式： OAI收割
来源：物理研究所
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