Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(2 root 3x2 root 3) R30 degrees surface
文献类型：期刊论文
| 作者 | Wang, LL ; Ma, XC ; Ji, SH ; Fu, YS ; Shen, QT ; Jia, JF ; Kelly, KF ; Xue, QK |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2008 |
| 卷号 | 77期号:20 |
| ISSN号 | 1098-0121 |
| 中文摘要 | Surface morphologies and electronic structures of Sri thin films prepared on Si(111)-Sn(2 root 3x2 root 3) R30 degrees substrate are investigated by low temperature scanning tunneling microscopy/scanning tunneling spectroscopy (STS). A typical Stranski-Krastanov growth is observed at various growth temperatures (95-300 K), and the Sn islands above wetting layers exhibit the preferential thicknesses of odd-numbered atomic layers. STS measurement shows the formation of well-defined quantum well states with an oscillation period of 2 ML, which modulates the surface energy and accounts for the observed preferential thicknesses. Due to the interplay between large lattice mismatch and symmetry difference, a transition from alpha-Sn to beta-Sn occurs at 4 ML, which confirms the previous report. From 4 to 11 ML, the mismatch resulted strain manifests the growth via thickness-dependent striplike modulation structures on the surfaces of all Sri islands. Upon room temperature annealing, the as-deposited Sri islands undergo a metal-insulator transition, while the band gaps of wetting layers increase and oppositely shift with respect to the Fermi level for n- and p-type substrates. The change in electronic property is attributed to the electron transfer at the Sn-Si interface, which also affects the growth and morphologies of films. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37491]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, LL,Ma, XC,Ji, SH,et al. Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(2 root 3x2 root 3) R30 degrees surface[J]. PHYSICAL REVIEW B,2008,77(20). |
| APA | Wang, LL.,Ma, XC.,Ji, SH.,Fu, YS.,Shen, QT.,...&Xue, QK.(2008).Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(2 root 3x2 root 3) R30 degrees surface.PHYSICAL REVIEW B,77(20). |
| MLA | Wang, LL,et al."Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(2 root 3x2 root 3) R30 degrees surface".PHYSICAL REVIEW B 77.20(2008). |
入库方式： OAI收割
来源：物理研究所
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