Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy
文献类型：期刊论文
| 作者 | He, M ; Liu, GZ ; Qiu, H ; Xing, J ; Lue, HB |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2008 |
| 卷号 | 57期号:2页码:1236 |
| ISSN号 | 1000-3290 |
| 中文摘要 | TiN thin films have been successfully epitaxially grown on Si substrates by laser molecular-beam epitaxy using the two-step method. The thin film has a smooth surface with a root-mean-square roughness of 0.842 nm over a 10 mu m x 10 mu m area. Hall measurement shows that the resistivity of the TiN film is 3.6 x 10(-5) Omega center dot cm and the mobility is up to 583.0 cm(2)/V center dot S at room temperature, which implies that TiN thin film is an excellent electrode material. The X-ray diffraction (XRD) theta-2 theta scan result together with the very high mobility show that the TiN film has high quality. The result that SrTiO3 thin film can be subseguently epitaxially grown on TiN/Si substrate indicates that the TiN thin film on Si substrate not only has good thermal stability, but also can be used as buffers or bottom electrode for epitaxial growth of other thin films or multilayer films. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37523]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | He, M,Liu, GZ,Qiu, H,et al. Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy[J]. ACTA PHYSICA SINICA,2008,57(2):1236. |
| APA | He, M,Liu, GZ,Qiu, H,Xing, J,&Lue, HB.(2008).Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy.ACTA PHYSICA SINICA,57(2),1236. |
| MLA | He, M,et al."Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy".ACTA PHYSICA SINICA 57.2(2008):1236. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。