Epitaxial growth of ZnO films on thin FeO(111) layers
文献类型：期刊论文
| 作者 | Xue, MS ; Guo, QL ; Wu, KH ; Guo, JD |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2009 |
| 卷号 | 311期号:15页码:3918 |
| 关键词 | RAY PHOTOELECTRON-SPECTROSCOPY MOLECULAR-BEAM EPITAXY IRON-OXIDE LAYERS BUFFER LAYER SURFACE STATES ALPHA-AL2O3(0001) ALPHA-FE2O3 DENSITIES MO(100) |
| ISSN号 | 0022-0248 |
| 通讯作者 | Guo, QL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | Thin FeO(111) buffer layers prepared on Mo(110) substrate were used to grow ordered ZnO films under ultrahigh vacuum condition, and were in situ characterized by various surface analytical techniques. A chemical interaction between Zn (or ZnO) and FeO(111) can effectively lower the interfacial energy, which is in favor of an epitaxial growth of ZnO on FeO layers. Compared with the MgO(111) buffer layer used for the growth of ZnO(0001) on sapphire (0001) surface, the FeO(111) thin films might be a better one because it is more thermally stable. Our experimental results provide constructive information on the growth mechanism of ZnO-based materials, which is helpful for further understanding the growth mechanism of related oxide materials. (c) 2009 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | NSF [20873177, 10574153]; MOST of China [2007CB936800] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37532]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xue, MS,Guo, QL,Wu, KH,et al. Epitaxial growth of ZnO films on thin FeO(111) layers[J]. JOURNAL OF CRYSTAL GROWTH,2009,311(15):3918. |
| APA | Xue, MS,Guo, QL,Wu, KH,&Guo, JD.(2009).Epitaxial growth of ZnO films on thin FeO(111) layers.JOURNAL OF CRYSTAL GROWTH,311(15),3918. |
| MLA | Xue, MS,et al."Epitaxial growth of ZnO films on thin FeO(111) layers".JOURNAL OF CRYSTAL GROWTH 311.15(2009):3918. |
入库方式： OAI收割
来源：物理研究所
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