Epitaxial orientation of Mg(2)Si(110) thin film on Si(111) substrate
文献类型：期刊论文
| 作者 | Wang, Y ; Wang, XN ; Mei, ZX ; Du, XL ; Zou, J ; Jia, JF ; Xue, QK ; Zhang, XN ; Zhang, Z |
| 刊名 | JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2007 |
| 卷号 | 102期号:12 |
| ISSN号 | 0021-8979 |
| 中文摘要 | Epitaxial Mg(2)Si(110) thin film has been obtained on Si(111) substrate by thermally enhanced solid-phase reaction of epitaxial Mg film with underlying Si substrate. An epitaxial orientation relationship of Si(111)parallel to Mg(2)Si(110) and Si < 1 (1) over bar0 >parallel to Mg(2)Si < 1 (1) over bar0 > has been revealed by transmission electron microscopy. The formation of the unusual epitaxial orientation relationship is attributed to the strain relaxation of Mg(2)Si film in a MgO/Mg(2)Si/Si double heterostructure. (c) 2007 American Institute of Physics. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37534]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, Y,Wang, XN,Mei, ZX,et al. Epitaxial orientation of Mg(2)Si(110) thin film on Si(111) substrate[J]. JOURNAL OF APPLIED PHYSICS,2007,102(12). |
| APA | Wang, Y.,Wang, XN.,Mei, ZX.,Du, XL.,Zou, J.,...&Zhang, Z.(2007).Epitaxial orientation of Mg(2)Si(110) thin film on Si(111) substrate.JOURNAL OF APPLIED PHYSICS,102(12). |
| MLA | Wang, Y,et al."Epitaxial orientation of Mg(2)Si(110) thin film on Si(111) substrate".JOURNAL OF APPLIED PHYSICS 102.12(2007). |
入库方式： OAI收割
来源：物理研究所
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