Epitaxial Tl2Ba2CaCU2OX thin film dc SQUIDs operating at 99 K
文献类型：期刊论文
| 作者 | Wang, J ; Han, B ; Xu, FZ ; Chen, GH ; Yang, QS ; Lu, RT ; He, M ; Yan, SL |
| 刊名 | SUPERCONDUCTOR SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2004 |
| 卷号 | 17期号:10页码:1165 |
| 关键词 | YBA2CU3O7-DELTA GRAIN-BOUNDARIES MICROWAVE SURFACE-RESISTANCE TRANSPORT-PROPERTIES JOSEPHSON JUNCTIONS CRITICAL CURRENTS CU-O SUPERCONDUCTIVITY TEMPERATURE |
| ISSN号 | 0953-2048 |
| 通讯作者 | Wang, J: Univ Penn, Dept Mech Engn & Appl Mech, 216 Towne Bldg, Philadelphia, PA 19104 USA. |
| 中文摘要 | Epitaxial Ti2Ba2CaCu2Ox thin film dc superconducting quantum interference devices (dc SQUIDs) have been fabricated on bicrystal SrTiO3 (STO) substrates. By using the Tl-2212 single phase film, a flux noise density, S-Phi(1/2), of 2.0 x 10(-5)Phi(0) Hz(-1/2) at liquid nitrogen temperature was obtained in the white noise region, which is more than one order of magnitude lower than previous Tl-based SQUIDs made by multiphase thin films. The Tl-2212 thin film bicrystal grain boundary Josephson junctions have demonstrated resistively shunted junction (RSJ) behaviour. The characteristic voltage, VC, which is the product of critical current I-C and junction resistance R-N, was 45 muV at 95 K. The dependence of the critical current on temperature near T-C ( 105 K) was measured as I-C(T) similar to (1 - T / T-C)(1.5-1.98). The dc SQUIDs can operate at temperatures up to 99 K. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37535]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, J,Han, B,Xu, FZ,et al. Epitaxial Tl2Ba2CaCU2OX thin film dc SQUIDs operating at 99 K[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY,2004,17(10):1165. |
| APA | Wang, J.,Han, B.,Xu, FZ.,Chen, GH.,Yang, QS.,...&Yan, SL.(2004).Epitaxial Tl2Ba2CaCU2OX thin film dc SQUIDs operating at 99 K.SUPERCONDUCTOR SCIENCE & TECHNOLOGY,17(10),1165. |
| MLA | Wang, J,et al."Epitaxial Tl2Ba2CaCU2OX thin film dc SQUIDs operating at 99 K".SUPERCONDUCTOR SCIENCE & TECHNOLOGY 17.10(2004):1165. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。