EPITAXIAL-GROWTH OF DIAMOND FILMS ON THE (221) AND (100) SURFACES OF C-BN WITH MICROSTRUCTURES FULL OF (100) FACETS
文献类型：期刊论文
| 作者 | CHAI, WP ; GU, YS ; LI, M ; MAI, ZH ; LI, QZ ; YUAN, L ; PANG, SJ |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1994 |
| 卷号 | 64期号:15页码:1941 |
| 关键词 | CHEMICAL VAPOR-DEPOSITION BIAS-ENHANCED NUCLEATION THIN-FILMS CRYSTALLOGRAPHIC ORIENTATIONS RAMAN MICROPROBE TEXTURED GROWTH SILICON |
| ISSN号 | 0003-6951 |
| 通讯作者 | CHAI, WP: CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | Diamond films on surfaces of cubic boron nitride substrate grown by microwave plasma chemical vapor deposition are investigated. Deposited films are characterized by scanning electron microscopy, reflection high-energy electron diffraction, and micro-Raman spectroscopy. We found a new stacking growth mode of the epitaxial diamond films which is distinguished from the previous observed modes. The morphologies of diamond (100) facets formed on the {221} and {100} surfaces of cubic boron nitride are steps and/or stages, respectively. This is beneficial to growing a fair perfect single-crystal films of diamond. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37537]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | CHAI, WP,GU, YS,LI, M,et al. EPITAXIAL-GROWTH OF DIAMOND FILMS ON THE (221) AND (100) SURFACES OF C-BN WITH MICROSTRUCTURES FULL OF (100) FACETS[J]. APPLIED PHYSICS LETTERS,1994,64(15):1941. |
| APA | CHAI, WP.,GU, YS.,LI, M.,MAI, ZH.,LI, QZ.,...&PANG, SJ.(1994).EPITAXIAL-GROWTH OF DIAMOND FILMS ON THE (221) AND (100) SURFACES OF C-BN WITH MICROSTRUCTURES FULL OF (100) FACETS.APPLIED PHYSICS LETTERS,64(15),1941. |
| MLA | CHAI, WP,et al."EPITAXIAL-GROWTH OF DIAMOND FILMS ON THE (221) AND (100) SURFACES OF C-BN WITH MICROSTRUCTURES FULL OF (100) FACETS".APPLIED PHYSICS LETTERS 64.15(1994):1941. |
入库方式： OAI收割
来源：物理研究所
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