Epitaxially oriented growth of diamond on silicon by hot filament chemical vapor deposition
文献类型：期刊论文
| 作者 | Chen, QJ ; Wang, LX ; Zhang, Z ; Yang, J ; Lin, ZD |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 1996 |
| 卷号 | 68期号:2页码:176 |
| 关键词 | BIAS-ENHANCED NUCLEATION TEXTURED GROWTH FILMS |
| ISSN号 | 0003-6951 |
| 中文摘要 | Expitaxially oriented growth of diamond film on Si(001) was achieved using hot filament chemical vapor deposition. The epitaxial relationship between the film and the substrate was confirmed by the observation through scanning electron microscopy and high-resolution transmission electron microscopy (HRTEM) as follows: Dia(001)//Si(001) and Dia[110]//Si[110] with a misorientation angle of 9 degrees between Dia(001) and Si(001). This reports the HRTEM observation of the largest area of the diamond/Si interface (larger than 880 Angstrom). It demonstrates that the intermediate beta-SiC layer is unnecessary for achieving diamond epitaxy on Si. Discussion reveals that the value of the misorientation angle between Dia(001) and Si(001) is not unique and should be controlled to deposit single-crystal diamond films on Si. (C) 1996 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37539]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, QJ,Wang, LX,Zhang, Z,et al. Epitaxially oriented growth of diamond on silicon by hot filament chemical vapor deposition[J]. APPLIED PHYSICS LETTERS,1996,68(2):176. |
| APA | Chen, QJ,Wang, LX,Zhang, Z,Yang, J,&Lin, ZD.(1996).Epitaxially oriented growth of diamond on silicon by hot filament chemical vapor deposition.APPLIED PHYSICS LETTERS,68(2),176. |
| MLA | Chen, QJ,et al."Epitaxially oriented growth of diamond on silicon by hot filament chemical vapor deposition".APPLIED PHYSICS LETTERS 68.2(1996):176. |
入库方式： OAI收割
来源：物理研究所
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