ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION
文献类型：期刊论文
| 作者 | DUAN, XF ; FUNG, KK ; CHU, YM |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1994 |
| 卷号 | 141期号:1-2页码:103 |
| 关键词 | BEAM ELECTRON-DIFFRACTION EPITAXIAL LAYERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | DUAN, XF: CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,POB 2724,100080 BEIJING,PEOPLES R CHINA. |
| 中文摘要 | 20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) and Ge0.5Si0.5 (5 nm)/Si(25 nm) were studied by double-crystal X-ray diffraction. The Ge content x was determined by computer simulation of the diffraction features from the superlattice. This method is shown to be independent of the relaxation of the superlattice. Alternatively, x can be obtained from the measured difference DELTAa/a in lattice spacing perpendicular to the growth plane. It is sensitive to the relaxation. Comparing the results obtained in these two different ways, information about the relaxation of the superlattices can be obtained. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37583]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | DUAN, XF,FUNG, KK,CHU, YM. ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION[J]. JOURNAL OF CRYSTAL GROWTH,1994,141(1-2):103. |
| APA | DUAN, XF,FUNG, KK,&CHU, YM.(1994).ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION.JOURNAL OF CRYSTAL GROWTH,141(1-2),103. |
| MLA | DUAN, XF,et al."ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION".JOURNAL OF CRYSTAL GROWTH 141.1-2(1994):103. |
入库方式： OAI收割
来源：物理研究所
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