Etching trenches to effectively create electron quantum wires for single-electron-transistor applications
文献类型：期刊论文
| 作者 | Fu, Y ; Willander, M ; Wang, TH |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:23页码:3705 |
| 关键词 | DOT STRUCTURE TRANSPORT OFFSETS WELLS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Fu, Y: Chalmers Univ Technol, Dept Phys, Phys Elect & Photon Microtechnol Ctr, Fysikgrand 3, S-41296 Gothenburg, Sweden. |
| 中文摘要 | BaTiO3 thin films were epitaxially grown on SrTiO3 (001) and LaNiO3/SrTiO3 substrates by pulsed laser deposition under different oxygen pressures. The oxygen content in the BaTiO3 films was determined using modified Rutherford backscattering. The structural characteristics of the films were analysed by x-ray diffraction theta /2 theta scan, phi scan, and symmetric and asymmetric omega scans. The dielectric and ferroelectric properties of the films were measured by an impedance analyser and by a Sawyer-Tower circuit, respectively. It was found that the atomic ratio of O/Ba and Ti/Ba in the BaTiO3 films increases with oxygen pressure. The films fabricated in the intermediate oxygen pressure range of 2 to 10 Pa show the c-axis oriented tetragonal structure with a stoichiometry close to the ideal value. These films exhibit a relatively large dielectric constant, small dielectric loss and good ferroelectricity with a symmetric hysteresis loop. For growth at low oxygen pressure i.e. 0.1 Pa, the film with tetragonal c-axis orientation shows significant degradation in its dielectric properties. For a higher deposition oxygen pressure of 20 Pa, the film has tetragonal a-axis orientation and shows no ferroelectricity but has the largest dielectric constant. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37586]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Fu, Y,Willander, M,Wang, TH. Etching trenches to effectively create electron quantum wires for single-electron-transistor applications[J]. APPLIED PHYSICS LETTERS,2001,78(23):3705. |
| APA | Fu, Y,Willander, M,&Wang, TH.(2001).Etching trenches to effectively create electron quantum wires for single-electron-transistor applications.APPLIED PHYSICS LETTERS,78(23),3705. |
| MLA | Fu, Y,et al."Etching trenches to effectively create electron quantum wires for single-electron-transistor applications".APPLIED PHYSICS LETTERS 78.23(2001):3705. |
入库方式： OAI收割
来源：物理研究所
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