Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
文献类型：期刊论文
| 作者 | Lv, YJ ; Lin, ZJ ; Meng, LG ; Yu, YX ; Luan, CB ; Cao, ZF ; Chen, H ; Sun, BQ ; Wang, ZG |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 99期号:12 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Lin, ZJ: Shandong Univ, Sch Phys, Jinan 250100, Peoples R China. |
| 中文摘要 | The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by time-resolved photoluminescence spectroscopy. By applying an external electric field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be observed reaching values larger than 30 ns; this is a consequence of the electric field tuning of the spin-orbit conduction band splitting which can almost vanish when the Rashba term compensates exactly the Dresselhaus one. The measurements under a transverse magnetic field demonstrate that the electron spin relaxation time for the three space directions can be tuned simultaneously with the applied electric field. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10774090]; National Basic Research Program of China [2007CB936602] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37590]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Lv, YJ,Lin, ZJ,Meng, LG,et al. Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics[J]. APPLIED PHYSICS LETTERS,2011,99(12). |
| APA | Lv, YJ.,Lin, ZJ.,Meng, LG.,Yu, YX.,Luan, CB.,...&Wang, ZG.(2011).Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics.APPLIED PHYSICS LETTERS,99(12). |
| MLA | Lv, YJ,et al."Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics".APPLIED PHYSICS LETTERS 99.12(2011). |
入库方式： OAI收割
来源：物理研究所
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