Evidence of photogenerated carriers in the semiconducting state of Nd0.67Sr0.37MnO3-delta epitaxial layers
文献类型:期刊论文
作者 | Liebe, J ; Haupt, L ; Kattwinkel, A ; Hamad, N ; Rao, GH ; Barner, K ; Gommert, E ; Wecker, J ; von Helmolt, R ; Braunstein, R ; Sun, GS ; Medvedeva, IV |
刊名 | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
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出版日期 | 1999 |
卷号 | 196页码:484 |
关键词 | HEAT DIFFUSIVITY MAGNETORESISTANCE |
ISSN号 | 0304-8853 |
通讯作者 | Barner, K: Univ Gottingen Inst, Inst Phys 4, Bunsenstr 13-15, D-37073 Gottingen, Germany. |
中文摘要 | Time-resolved thermoelectric power measurements on Nd2/3Sr1/3MnO3-delta epitaxial layers show a voltage transient which is superimposed to the usual quasistatic thermovoltage decay which is due to heat diffusion, but only in the activated regime. The characteristic temperature of the separation is 140 K. The extra transients are ascribed to the decay of an ambipolar charge distribution in trap states. (C) 1999 Elsevier Science B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/37627] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Liebe, J,Haupt, L,Kattwinkel, A,et al. Evidence of photogenerated carriers in the semiconducting state of Nd0.67Sr0.37MnO3-delta epitaxial layers[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,1999,196:484. |
APA | Liebe, J.,Haupt, L.,Kattwinkel, A.,Hamad, N.,Rao, GH.,...&Medvedeva, IV.(1999).Evidence of photogenerated carriers in the semiconducting state of Nd0.67Sr0.37MnO3-delta epitaxial layers.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,196,484. |
MLA | Liebe, J,et al."Evidence of photogenerated carriers in the semiconducting state of Nd0.67Sr0.37MnO3-delta epitaxial layers".JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 196(1999):484. |
入库方式: OAI收割
来源:物理研究所
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