Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates
文献类型：期刊论文
| 作者 | Li, JH ; Peng, CS ; Mai, ZH ; Zhou, JM ; Huang, Q ; Dai, DY |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 1999 |
| 卷号 | 86期号:3页码:1292 |
| 关键词 | THREADING DISLOCATION DENSITY STRAIN RELAXATION HETEROEPITAXIAL LAYERS MISFIT DISLOCATIONS SURFACE-MORPHOLOGY SUPERLATTICES DIFFRACTION BUFFERS FILMS |
| ISSN号 | 0021-8979 |
| 通讯作者 | Li, JH: Univ Houston, Dept Phys, Houston, TX 77204 USA. |
| 中文摘要 | In this article, we report a study of mosaic structures in partially relaxed Si0.7Ge0.3 epilayers grown on Si(001) substrates by x-ray double- and triple-axis diffractometry. The samples have different layer thicknesses and hence different degrees of strain relaxation. Our results show that, at early stages of strain relaxation, the films contain mosaic regions laterally separated by perfect regions. This is because the mosaic structure caused by a misfit dislocation is effectively localized in a lateral range of the layer thickness. Therefore, far from the dislocations, the film is virtually a perfect crystal. With the increase in the degree of strain relaxation, and consequently in the dislocation density, the mosaic regions of the layer expand while the perfect regions shrink and finally vanish completely. Moreover, our results indicate that the conventional method of estimating dislocation density from the x-ray rocking curve width fails in our case. (C) 1999 American Institute of Physics. [S0021-8979(99)01515-7]. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37645]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, JH,Peng, CS,Mai, ZH,et al. Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates[J]. JOURNAL OF APPLIED PHYSICS,1999,86(3):1292. |
| APA | Li, JH,Peng, CS,Mai, ZH,Zhou, JM,Huang, Q,&Dai, DY.(1999).Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates.JOURNAL OF APPLIED PHYSICS,86(3),1292. |
| MLA | Li, JH,et al."Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates".JOURNAL OF APPLIED PHYSICS 86.3(1999):1292. |
入库方式： OAI收割
来源：物理研究所
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