Exploration of Ba3N2 flux for GaN single-crystal growth
文献类型：期刊论文
| 作者 | Bao, HQ ; Li, H ; Wang, G ; Song, B ; Wang, WJ ; Chen, XL |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2008 |
| 卷号 | 310期号:12页码:2955 |
| 关键词 | NA FLUX LASER-DIODES BULK ADDITIVES PRESSURE EPITAXY CA |
| ISSN号 | 0022-0248 |
| 通讯作者 | Chen, XL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Here, we report the exploration of Ba3N2 as a new flux to grow GaN single crystals from a Ga melt at 900 degrees C and under a nitrogen pressure of about 2 atm. Scanning electron microscope (SEM) observations indicated that regular pyramidal crystals with a size of 10-20 mu m were obtained. Raman scattering measurement confirmed the axial direction of crystals as the c-direction. Morphological features of crystals were compared with that of GaN crystals grown by using Li3N, Na and Ca3N2 flux. These results prove that Ba3N2 is an effective new flux for growing GaN crystals. (c) 2008 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37836]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Bao, HQ,Li, H,Wang, G,et al. Exploration of Ba3N2 flux for GaN single-crystal growth[J]. JOURNAL OF CRYSTAL GROWTH,2008,310(12):2955. |
| APA | Bao, HQ,Li, H,Wang, G,Song, B,Wang, WJ,&Chen, XL.(2008).Exploration of Ba3N2 flux for GaN single-crystal growth.JOURNAL OF CRYSTAL GROWTH,310(12),2955. |
| MLA | Bao, HQ,et al."Exploration of Ba3N2 flux for GaN single-crystal growth".JOURNAL OF CRYSTAL GROWTH 310.12(2008):2955. |
入库方式： OAI收割
来源：物理研究所
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