Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes
文献类型：期刊论文
| 作者 | Zheng, H ; Mei, ZX ; Zeng, ZQ ; Liu, YZ ; Guo, LW ; Jia, JF ; Xue, QK ; Zhang, Z ; Du, XL |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2011 |
| 卷号 | 520期号:1页码:445 |
| 关键词 | EMITTING-DIODES ROOM-TEMPERATURE OHMIC CONTACTS JUNCTION DIODE LOW-RESISTANCE HETEROSTRUCTURE DEVICES |
| ISSN号 | 0040-6090 |
| 通讯作者 | Zheng, H: Univ Kiel, Inst Expt & Angew Phys, D-24098 Kiel, Germany. |
| 中文摘要 | A giant exchange bias field of up to 1170 Oe was observed in the Mn2Ni1.6Sn0.4 Heusler alloy. A reentrant spin glass phase and a ferromagnetic martensitic phase coexist below the blocking temperature as confirmed by dc magnetization and ac susceptibility measurements. Exchange bias in Mn2Ni1.6Sn0.4 is thought to originate from the interface exchange interaction between the reentrant spin glass phase and the ferromagnetic martensitic phase. X-ray diffraction and selected area electron diffraction results demonstrate that excess Mn atoms occupy Ni and Sn sites randomly. In this way, Mn-Mn clusters are formed and constitute the reentrant-spin-glass phase. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3651767] |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation of China [50532090, 60606023, 60621091]; Ministry of Science and Technology of China [2007CB936203, 2009CB929400, 2009CB623700] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37872]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zheng, H,Mei, ZX,Zeng, ZQ,et al. Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes[J]. THIN SOLID FILMS,2011,520(1):445. |
| APA | Zheng, H.,Mei, ZX.,Zeng, ZQ.,Liu, YZ.,Guo, LW.,...&Du, XL.(2011).Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes.THIN SOLID FILMS,520(1),445. |
| MLA | Zheng, H,et al."Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes".THIN SOLID FILMS 520.1(2011):445. |
入库方式： OAI收割
来源：物理研究所
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