Fabrication and characterization of metal/ferroelectric/semiconductor field effect transistor with the Ag/Bi4Ti3O12/p-Si(100) structure
文献类型:期刊论文
作者 | Yu, J ; Wang, H ; Zhao, BR ; Wang, YB ; Guo, DY ; Gao, JX ; Zhou, WL ; Xie, JF |
刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
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出版日期 | 2004 |
卷号 | 43期号:5A页码:2435 |
关键词 | FERROELECTRIC MEMORIES THIN-FILMS |
ISSN号 | 0021-4922 |
通讯作者 | Yu, J: Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China. |
中文摘要 | Metal-ferroelectric-semiconductor field-effect-transistors (MFS-FETs) with the Ag/Bi4Ti3O12/p-Si (100) structures were fabricated. The I-ds-V-g hysteresis curve of the FET shows the counter-clockwise direction, which demonstrates the charge of channel conductivity due to the ferroelectric polarization of Bi4Ti3O12 and the memory window with a gate voltage of +/-6V was 1.2 V. The current ratio of I-ds(on) to I-ds(off) was over two orders in magnitude at zero gate voltage which indicates the MFS-FET can be used in nondestructive readout (NDRO) applications. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/37875] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Yu, J,Wang, H,Zhao, BR,et al. Fabrication and characterization of metal/ferroelectric/semiconductor field effect transistor with the Ag/Bi4Ti3O12/p-Si(100) structure[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2004,43(5A):2435. |
APA | Yu, J.,Wang, H.,Zhao, BR.,Wang, YB.,Guo, DY.,...&Xie, JF.(2004).Fabrication and characterization of metal/ferroelectric/semiconductor field effect transistor with the Ag/Bi4Ti3O12/p-Si(100) structure.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,43(5A),2435. |
MLA | Yu, J,et al."Fabrication and characterization of metal/ferroelectric/semiconductor field effect transistor with the Ag/Bi4Ti3O12/p-Si(100) structure".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43.5A(2004):2435. |
入库方式: OAI收割
来源:物理研究所
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