中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication and characterization of metal/ferroelectric/semiconductor field effect transistor with the Ag/Bi4Ti3O12/p-Si(100) structure

文献类型:期刊论文

作者Yu, J ; Wang, H ; Zhao, BR ; Wang, YB ; Guo, DY ; Gao, JX ; Zhou, WL ; Xie, JF
刊名JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
出版日期2004
卷号43期号:5A页码:2435
关键词FERROELECTRIC MEMORIES THIN-FILMS
ISSN号0021-4922
通讯作者Yu, J: Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China.
中文摘要Metal-ferroelectric-semiconductor field-effect-transistors (MFS-FETs) with the Ag/Bi4Ti3O12/p-Si (100) structures were fabricated. The I-ds-V-g hysteresis curve of the FET shows the counter-clockwise direction, which demonstrates the charge of channel conductivity due to the ferroelectric polarization of Bi4Ti3O12 and the memory window with a gate voltage of +/-6V was 1.2 V. The current ratio of I-ds(on) to I-ds(off) was over two orders in magnitude at zero gate voltage which indicates the MFS-FET can be used in nondestructive readout (NDRO) applications.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/37875]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Yu, J,Wang, H,Zhao, BR,et al. Fabrication and characterization of metal/ferroelectric/semiconductor field effect transistor with the Ag/Bi4Ti3O12/p-Si(100) structure[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2004,43(5A):2435.
APA Yu, J.,Wang, H.,Zhao, BR.,Wang, YB.,Guo, DY.,...&Xie, JF.(2004).Fabrication and characterization of metal/ferroelectric/semiconductor field effect transistor with the Ag/Bi4Ti3O12/p-Si(100) structure.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,43(5A),2435.
MLA Yu, J,et al."Fabrication and characterization of metal/ferroelectric/semiconductor field effect transistor with the Ag/Bi4Ti3O12/p-Si(100) structure".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43.5A(2004):2435.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。