Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties
文献类型：期刊论文
| 作者 | Huang, Y ; Liu, F ; Luo, Q ; Tian, Y ; Zou, Q ; Li, C ; Shen, CM ; Deng, SZ ; Gu, CZ ; Xu, NS ; Gao, HJ |
| 刊名 | NANO RESEARCH
 |
| 出版日期 | 2012 |
| 卷号 | 5期号:12页码:896 |
| 关键词 | TRANSPORT |
| ISSN号 | 1998-0124 |
| 通讯作者 | Gao, HJ: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Enhanced absorption of especially long wavelength light is needed to enable the full potential of semiconductor nanowire (NW) arrays for optoelectronic applications. We show both experimentally and theoretically that a transparent dielectric shell (Al2O3 coating) can drastically improve the absorption of light in InAs NW arrays. With an appropriate thickness of the Al2O3 shell, we achieve four times stronger absorption in the NWs compared to uncoated NWs and twice as good absorption as when the dielectric completely fills the space between the NWs. We provide detailed theoretical analysis from a combination of full electrodynamic modeling and intuitive electrostatic approximations. This reveals how the incident light penetrates better into the absorbing NW core with increasing thickness of the dielectric shell until a resonant shell thickness is reached. We provide a simple description of how to reach this strongly absorbing resonance condition, making our results easy to apply for a broad wavelength range and a multifold of semiconductor and dielectric coating material combinations. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50872147, 51072237, U0734003, 50802117, 50725206]; Foundation of Education Ministry of China [2009-30000-3161452]; National Basic Research Program of China (973 Program) [2013CB933604]; China Scholarship Council |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37944]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang, Y,Liu, F,Luo, Q,et al. Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties[J]. NANO RESEARCH,2012,5(12):896. |
| APA | Huang, Y.,Liu, F.,Luo, Q.,Tian, Y.,Zou, Q.,...&Gao, HJ.(2012).Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties.NANO RESEARCH,5(12),896. |
| MLA | Huang, Y,et al."Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties".NANO RESEARCH 5.12(2012):896. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。