Fabrication of patterned sapphire substrate by wet chemical etching for maskless lateral overgrowth of GaN
文献类型：期刊论文
| 作者 | Wang, J ; Guo, LW ; Jia, HQ ; Wang, Y ; Xing, ZG ; Li, W ; Chen, H ; Zhou, JM |
| 刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
 |
| 出版日期 | 2006 |
| 卷号 | 153期号:3页码:C182 |
| 关键词 | INDUCTIVELY-COUPLED PLASMAS VAPOR-PHASE EPITAXY GROWTH DEPOSITION SILICON LAYERS |
| ISSN号 | 0013-4651 |
| 通讯作者 | Wang, J: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | The grooved c-plane sapphire substrates were first systematically investigated by wet chemical etching, with H2SO4 and a 3H(2)SO(4):1H(3)PO(4) mixture as the etchants. The structural and morphological characteristics of the grooved sapphire with mask stripes along the < 11 (2) over bar0 > and < 1 (1) over bar 00 > directions, respectively, were studied under different etching time and temperatures by scanning electron microscopy (SEM). Two kinds of groove shapes are obtained. One is a V-groove whose two sidewalls are both formed by a single facet. The other is a U-groove whose one sidewall consists of two or three facets, and the other sidewall is composed of a single facet. SEM cross-sectional images show symmetrical sidewall facets with stripes along the sapphire (1 (1) over bar 00) direction and asymmetrical sidewall facets with stripes along the sapphire < 11 (2) over bar0 > direction. The etching depth is linear with the etching time. The activation energies of etching reaction are evaluated in the temperature range 340-400 degrees C. It is confirmed that sapphire with stripes along the < 11 (2) over bar0 > direction is suitable for lateral epitaxial overgrowth of low-threading-dislocation GaN films. (c) 2006 The Electrochemical Society. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37946]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, J,Guo, LW,Jia, HQ,et al. Fabrication of patterned sapphire substrate by wet chemical etching for maskless lateral overgrowth of GaN[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2006,153(3):C182. |
| APA | Wang, J.,Guo, LW.,Jia, HQ.,Wang, Y.,Xing, ZG.,...&Zhou, JM.(2006).Fabrication of patterned sapphire substrate by wet chemical etching for maskless lateral overgrowth of GaN.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,153(3),C182. |
| MLA | Wang, J,et al."Fabrication of patterned sapphire substrate by wet chemical etching for maskless lateral overgrowth of GaN".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 153.3(2006):C182. |
入库方式： OAI收割
来源：物理研究所
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