Fabrication of pinned magnetic tunnel junctions using a contact shadow mask method
文献类型：期刊论文
| 作者 | You, C ; Zhao, YP ; Jin, EJ ; Li, FF ; Wang, TX ; Zeng, ZM ; Peng, ZL |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2004 |
| 卷号 | 53期号:8页码:2741 |
| 关键词 | CO75FE25 FERROMAGNETIC ELECTRODES LARGE MAGNETORESISTANCE FILMS TEMPERATURE DEPENDENCE FIELD AL |
| ISSN号 | 1000-3290 |
| 通讯作者 | You, C: Tianjin Univ Technol, Dept Mat Sci & Engn, Tianjin 300191, Peoples R China. |
| 中文摘要 | Four types of pinned magnetic tunnel junctions (MTJs) with three-key-layer structures of Py/Al2O3/Py, Py/Al2O3/Co, Co/Al2O3/Py, Co/Al2O3/Co were fabricated using a contact shadow mask method and an antiferromagnetically pinned layer of Ir-22 Mn-78. The slit width of the shadow mask is 100 mum, and the composition of permalloy is Py = Ni-79 Fe-21. For example, the MTJs of Co/Al2O3/Co with a tunneling magnetoresistance (TMR) ratio of 17.2%, the junction resistance of 76 Omega, the resistance-area product RS of 760 kOmegamum(2), and the free-layer reversal field of 1114 A (.) m(-1) defined as the field where the TMR rises to 50% of the total jump were achieved at the as-deposited state at room temperature. Furthermore, when the magnetic field increases from 0 to 1114 A (.) m(-1) the TMR ratio jumps from 0 to 17.2% with one step, which shows that the magnetic field sensitivity of the junction reached at 0.1%/(10(3) A (.) m(-1)). While, the TMR vs external filed H curves for the pinned MTJs of Co/Al2O3/Py show a good rectangular shape with a small free-layer reversal filed of 1114 A (.) m(-1). Our experimental results show that such MTJs can be used to fabricate the magnetic field sensitive sensors or prototype demonstration devices of magnetoresistive random access memory. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37949]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | You, C,Zhao, YP,Jin, EJ,et al. Fabrication of pinned magnetic tunnel junctions using a contact shadow mask method[J]. ACTA PHYSICA SINICA,2004,53(8):2741. |
| APA | You, C.,Zhao, YP.,Jin, EJ.,Li, FF.,Wang, TX.,...&Peng, ZL.(2004).Fabrication of pinned magnetic tunnel junctions using a contact shadow mask method.ACTA PHYSICA SINICA,53(8),2741. |
| MLA | You, C,et al."Fabrication of pinned magnetic tunnel junctions using a contact shadow mask method".ACTA PHYSICA SINICA 53.8(2004):2741. |
入库方式： OAI收割
来源：物理研究所
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