Fabrication of vertically aligned single-crystalline boron nanowire arrays and investigation of their field-emission behavior
文献类型：期刊论文
| 作者 | Liu, F ; Tian, JF ; Bao, LH ; Yang, TZ ; Shen, CM ; Lai, XY ; Xiao, ZM ; Xie, WG ; Deng, SZ ; Chen, J ; She, JC ; Xu, NS ; Gao, HJ |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2008 |
| 卷号 | 20期号:13页码:2609 |
| 关键词 | ATOMIC-FORCE MICROSCOPY CARBON NANOTUBE FILMS LASER-ABLATION NANOPARTICLES TRANSPORT NANORODS |
| ISSN号 | 0935-9648 |
| 通讯作者 | Xu, NS: Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China. |
| 中文摘要 | Aligned single crystalline boron nanowire arrays are formed by thermal carbon reduction. The SEM image shows an array of boron nanowires (ca. 5 mu m long) vertically aligned in high density on a Si substrate. These nanowires have a high enhancement factor, good emission stability, and can endure high current, which suggest they are an excellent candidate for field-emission applications. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37958]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, F,Tian, JF,Bao, LH,et al. Fabrication of vertically aligned single-crystalline boron nanowire arrays and investigation of their field-emission behavior[J]. ADVANCED MATERIALS,2008,20(13):2609. |
| APA | Liu, F.,Tian, JF.,Bao, LH.,Yang, TZ.,Shen, CM.,...&Gao, HJ.(2008).Fabrication of vertically aligned single-crystalline boron nanowire arrays and investigation of their field-emission behavior.ADVANCED MATERIALS,20(13),2609. |
| MLA | Liu, F,et al."Fabrication of vertically aligned single-crystalline boron nanowire arrays and investigation of their field-emission behavior".ADVANCED MATERIALS 20.13(2008):2609. |
入库方式： OAI收割
来源：物理研究所
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