Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method
文献类型：期刊论文
| 作者 | Peng, TH ; Yang, H ; Jian, JK ; Wang, WJ ; Wang, WY ; Chen, XL |
| 刊名 | CRYSTAL RESEARCH AND TECHNOLOGY
 |
| 出版日期 | 2009 |
| 卷号 | 44期号:4页码:357 |
| 关键词 | SEEDED SUBLIMATION GROWTH PHYSICAL VAPOR TRANSPORT SILICON-CARBIDE TEMPERATURE-GRADIENT SIC POLYTYPES BOULES 6H |
| ISSN号 | 0232-1300 |
| 通讯作者 | Chen, XL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | Misoriented domains (MDs) are common defects in 6H-SiC single crystals. We performed an experimental study on the formation of MDs in 2-inch 6H-SiC single crystals, Micro-Raman spectroscopy revealed that the polytype of MDs was mainly 4H-SiC. By changing growth conditions, it was found that the MDs' formation was closely related to growth rate and the position of highest temperature relative to growth interface. When the growth rate of ingots was relatively high the MDs were more likely to form. Furthermore, the nearer growth interface the position of highest temperature was, the: larger the size of the MDs. Based on our experimental findings we suggested that the MDs' formation and the polytype switching from 6H- to 4H-SiC were due to too large axial and/or radial temperature gradients. The results would be helpful to improve the quality of SiC single crystals grown by PVT technique. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of PR China [50502039, 50702073]; "973" Program [513270606, 2007CB936300]; National High Technology Research and Development Program of China [2006AA03A146, 2006AA03A 107] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/37988]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Peng, TH,Yang, H,Jian, JK,et al. Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2009,44(4):357. |
| APA | Peng, TH,Yang, H,Jian, JK,Wang, WJ,Wang, WY,&Chen, XL.(2009).Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method.CRYSTAL RESEARCH AND TECHNOLOGY,44(4),357. |
| MLA | Peng, TH,et al."Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method".CRYSTAL RESEARCH AND TECHNOLOGY 44.4(2009):357. |
入库方式： OAI收割
来源：物理研究所
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