中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fano resonance in the luminescence spectra of donor bound excitons in polar semiconductors

文献类型:期刊论文

作者Jin, KJ ; Xu, SJ
刊名APPLIED PHYSICS LETTERS
出版日期2007
卷号90期号:3
关键词QUANTUM-WELLS RAMAN-SCATTERING LO PHONONS INTERFERENCE STATES SUPERLATTICES EXCITATIONS ZNO
ISSN号0003-6951
通讯作者Jin, KJ: Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China.
中文摘要An unusual response in the luminescence measurements of GaN thin film and ZnO bulk crystal is observed at low temperatures. The authors demonstrate theoretically that such an unusual response is due to the longitudinal optical phonon mediated Fano resonance involved in the recombination process of the donor bound exciton. The line shapes obtained by the calculation in the present mechanism are in excellent agreement with the experimental results. (c) 2007 American Institute of Physics.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/37997]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Jin, KJ,Xu, SJ. Fano resonance in the luminescence spectra of donor bound excitons in polar semiconductors[J]. APPLIED PHYSICS LETTERS,2007,90(3).
APA Jin, KJ,&Xu, SJ.(2007).Fano resonance in the luminescence spectra of donor bound excitons in polar semiconductors.APPLIED PHYSICS LETTERS,90(3).
MLA Jin, KJ,et al."Fano resonance in the luminescence spectra of donor bound excitons in polar semiconductors".APPLIED PHYSICS LETTERS 90.3(2007).

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。