Fermi-Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping
文献类型：期刊论文
| 作者 | Jiang, YP ; Sun, YY ; Chen, M ; wang, yl ; Li, Z ; Song, CL ; He, K ; Wang, LL ; Chen, X ; Xue, QK ; Ma, XC ; Zhang, SB |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 108期号:6 |
| 关键词 | 3-DIMENSIONAL TOPOLOGICAL INSULATOR SINGLE DIRAC CONE ELECTRONIC-STRUCTURE SURFACE-STATES BI2TE3 BI2SE3 LIMIT |
| ISSN号 | 0031-9007 |
| 通讯作者 | Ma, XC: Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | High-quality Sb2Te3 films are obtained by molecular beam epitaxy on a graphene substrate and investigated by in situ scanning tunneling microscopy and spectroscopy. Intrinsic defects responsible for the natural p-type conductivity of Sb2Te3 are identified to be the Sb vacancies and Sb-Te antisites in agreement with first-principles calculations. By minimizing defect densities, coupled with a transfer doping by the graphene substrate, the Fermi level of Sb2Te3 thin films can be tuned over the entire range of the bulk band gap. This establishes the necessary condition to explore topological insulator behaviors near the Dirac point. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation; Ministry of Science and Technology of China; U.S. Department of Energy [DE-SC0002623]; Office of Science of the U.S. Department of Energy [DE-AC02-05CH11231] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38082]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Jiang, YP,Sun, YY,Chen, M,et al. Fermi-Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping[J]. PHYSICAL REVIEW LETTERS,2012,108(6). |
| APA | Jiang, YP.,Sun, YY.,Chen, M.,wang, yl.,Li, Z.,...&Zhang, SB.(2012).Fermi-Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping.PHYSICAL REVIEW LETTERS,108(6). |
| MLA | Jiang, YP,et al."Fermi-Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping".PHYSICAL REVIEW LETTERS 108.6(2012). |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。