Ferroelectric Gated Electrical Transport in CdS Nanotetrapods
文献类型：期刊论文
| 作者 | Fu, WY ; Qin, SY ; Liu, L ; Kim, TH ; Hellstrom, S ; Wang, WL ; Liang, WJ ; Bai, XD ; Li, AP ; Wang, EG |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 11期号:5页码:1913 |
| 关键词 | FIELD-EFFECT TRANSISTOR CARBON-NANOTUBE ROOM-TEMPERATURE MEMORY NANOCRYSTALS DIELECTRICS TETRAPODS GROWTH |
| ISSN号 | 1530-6984 |
| 通讯作者 | Wang, WL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Complex nanostructures such as branched semiconductor nanotetrapods are promising building blocks for next-generation nanoelectronics. Here we report on the electrical transport properties of individual CdS tetrapods in a field effect transistor (FET) configuration with a ferroelectric Ba(0.7)Sr(0.3)TiO(3) film as high-k, switchable gate dielectric. A cryogenic four-probe scanning tunneling microscopy (STM) is used to probe the electrical transport through individual nanotetrapods at different temperatures. A p-type field effect is observed at room temperature, owing to the enhanced gate capacitance coupling. And the reversible remnant polarization of the ferroelectric gate dielectric leads to a well-defined nonvolatile memory effect. The field effect is shown to originate from the channel tuning in the arm/core/arm junctions of nanotetrapods. At low temperature (8.5 K), the nanotetrapod devices exhibit a ferroelectric-modulated single-electron transistor (SET) behavior. The results illustrate how the characteristics of a ferroelectric such as switchable polarization and high dielectric constant can be exploited to control the functionality of individual three-dimensional nanoarchitectures. |
| 收录类别 | SCI |
| 资助信息 | MOST [2009DFA01290, 2007CB936203, 2007AA03Z353]; CAS of China; Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38089]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Fu, WY,Qin, SY,Liu, L,et al. Ferroelectric Gated Electrical Transport in CdS Nanotetrapods[J]. NANO LETTERS,2011,11(5):1913. |
| APA | Fu, WY.,Qin, SY.,Liu, L.,Kim, TH.,Hellstrom, S.,...&Wang, EG.(2011).Ferroelectric Gated Electrical Transport in CdS Nanotetrapods.NANO LETTERS,11(5),1913. |
| MLA | Fu, WY,et al."Ferroelectric Gated Electrical Transport in CdS Nanotetrapods".NANO LETTERS 11.5(2011):1913. |
入库方式： OAI收割
来源：物理研究所
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