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Chinese Academy of Sciences Institutional Repositories Grid
Ferroelectric switching mechanism in SrBi2Ta2O9

文献类型:期刊论文

作者Ding, Y ; Liu, JS ; MacLaren, I ; Wang, YN
刊名APPLIED PHYSICS LETTERS
出版日期2001
卷号79期号:7页码:1015
关键词PB(ZR DOMAIN-STRUCTURE FATIGUE CAPACITORS ELECTRODES CERAMICS MODEL BEHAVIOR TI)O-3 THIN-FILMS
ISSN号0003-6951
通讯作者Ding, Y: Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China.
中文摘要The ferroelectric switching mechanism in strontium bismuth tantalate [SrBi2Ta2O9 (SBT)] has been studied using in situ transmission electron microscopy observations of the nucleation and growth of polarization domains, such as 180 degrees and 90 degrees domains. Thank to this high density of the antiphase boundary (APB), a switching mechanism in SBT based on the nucleation of new polarization domains at APBs as well as the electrode interfaces put forward and the fatigue-free behavior of SBT with a platinum electrode is explained. (C) 2001 American Institute of Physics.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/38092]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Ding, Y,Liu, JS,MacLaren, I,et al. Ferroelectric switching mechanism in SrBi2Ta2O9[J]. APPLIED PHYSICS LETTERS,2001,79(7):1015.
APA Ding, Y,Liu, JS,MacLaren, I,&Wang, YN.(2001).Ferroelectric switching mechanism in SrBi2Ta2O9.APPLIED PHYSICS LETTERS,79(7),1015.
MLA Ding, Y,et al."Ferroelectric switching mechanism in SrBi2Ta2O9".APPLIED PHYSICS LETTERS 79.7(2001):1015.

入库方式: OAI收割

来源:物理研究所

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