Field emission from nitrogen-implanted CVD diamond film grown on silicon wafer
文献类型：期刊论文
| 作者 | Li, JJ ; Zheng, WT ; Gu, CZ ; Jin, ZS ; Gu, GR ; Mei, XX ; Mu, ZX ; Dong, C |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2005 |
| 卷号 | 81期号:2页码:357 |
| 关键词 | CARBON NITRIDE FILMS ELECTRON-EMISSION AMORPHOUS-CARBON ION-IMPLANTATION THIN-FILMS ENERGY THRESHOLD MECHANISM ROUGHNESS GRAPHITE |
| ISSN号 | 0947-8396 |
| 通讯作者 | Li, JJ: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Nitrogen was implanted into chemical vapor deposition (CVD) diamond films and the electron field emission properties of the nitrogenated diamond films were investigated. Nitrogen implantation was carried out using 10 keV in the dose range from 1x10(16) to 5x10(17) cm(-2) at room temperature. Raman and X-ray photoelectron spectroscopy measurements revealed that nitrogen implantation damaged the structure of the diamond film and promoted the formation of sp(2) C-C and sp(2) C-N bondings. Increasing the implantation dose could lower the threshold field of the emission of the diamond film from 18V/mu m to 4V/mu m. The effective work function of the nitrogen-implanted CVD diamond films was estimated to be in the range of 0.01-0.1 eV. The enhancement of field emission for nitrogen-implanted CVD diamond films was attributed to the increase of the sp(2) C bonds fraction and the formation of defect bands within the bulk diamond band gap induced by nitrogen implantation, which could alter the work function and elevate the Fermi level. Consequently, the energy barrier for electron tunneling was reduced. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38152]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, JJ,Zheng, WT,Gu, CZ,et al. Field emission from nitrogen-implanted CVD diamond film grown on silicon wafer[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2005,81(2):357. |
| APA | Li, JJ.,Zheng, WT.,Gu, CZ.,Jin, ZS.,Gu, GR.,...&Dong, C.(2005).Field emission from nitrogen-implanted CVD diamond film grown on silicon wafer.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,81(2),357. |
| MLA | Li, JJ,et al."Field emission from nitrogen-implanted CVD diamond film grown on silicon wafer".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 81.2(2005):357. |
入库方式： OAI收割
来源：物理研究所
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