Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions
文献类型：期刊论文
| 作者 | Chen, LM ; Li, GC ; Zhang, Y ; Guo, YF |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:7 |
| 关键词 | ELECTRON DEPOSITION TECHNIQUE SCHOTTKY DIODES SRTIO3 |
| ISSN号 | 0256-307X |
| 通讯作者 | Chen, LM: Zhengzhou Inst Aeronaut Ind Management, Zhengzhou 450015, Henan, Peoples R China. |
| 中文摘要 | In this work, p-n junctions are made from directly depositing optimal doped La1.85Sr0.15CuO4 (LSCO) films on n-type Nb-doped SrTiO3 substrates. Film thickness controlled rectifying behaviors are strikingly displayed. The starting points of the diffusion voltage reduction Vd-on change clearly with varying film thickness Vd-on and T-C coincide with each other when the film thickness is larger than 300 nm, indicating a close relation between the two parameters. However, when the film is very thin (< 350 nm) a departure between the two parameters was also observed. A possible reason for this is discussed within the framework of an inhomogeneous Schottky contact. Enhanced interface inhomogeneity due to the tensile strain appears to be the origin. |
| 收录类别 | SCI |
| 资助信息 | Key Project Foundation of Science and Technology of He'nan Province [092102210166]; Natural Science Foundation of He'nan Provincial Educational Department [2008A140013, 2010B140015] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38192]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, LM,Li, GC,Zhang, Y,et al. Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions[J]. CHINESE PHYSICS LETTERS,2010,27(7). |
| APA | Chen, LM,Li, GC,Zhang, Y,&Guo, YF.(2010).Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions.CHINESE PHYSICS LETTERS,27(7). |
| MLA | Chen, LM,et al."Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions".CHINESE PHYSICS LETTERS 27.7(2010). |
入库方式： OAI收割
来源：物理研究所
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