Finite-element study of strain field in strained-Si MOSFET
文献类型：期刊论文
| 作者 | Liu, HH ; Duan, XF ; Xu, QX |
| 刊名 | MICRON
 |
| 出版日期 | 2009 |
| 卷号 | 40期号:2页码:274 |
| 关键词 | BEAM ELECTRON-DIFFRACTION HOLE MOBILITY ENHANCEMENT ELASTIC RELAXATION LAYER SUPERLATTICES EFFECT TRANSISTORS CMOS PERFORMANCE SILICON SPECIMENS PMOSFETS |
| ISSN号 | 0968-4328 |
| 通讯作者 | Duan, XF: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The strain field in the channel of a p-type meta I-oxide-semiconductor held effect transistor fabricated by integrating Ge pre-amorphization implantation for source/drain regions is evaluated using a finite-element method combining with large angle convergent-beam electron diffraction (LACBED). The finite-element calculation shows that there is a very large compressive strain in the top layer of the channel region caused by a low dose of Ge ion implantation in the source and drain extension regions. Moreover, a transition region is formed in the bottom of the channel region and the top of the Si substrate. These calculation results are in good agreement with the LACBED experiments. (c) 2008 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | Ministry of Science and Technology of China [2007CB936301, 2001CB610502, G2000036504] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38202]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, HH,Duan, XF,Xu, QX. Finite-element study of strain field in strained-Si MOSFET[J]. MICRON,2009,40(2):274. |
| APA | Liu, HH,Duan, XF,&Xu, QX.(2009).Finite-element study of strain field in strained-Si MOSFET.MICRON,40(2),274. |
| MLA | Liu, HH,et al."Finite-element study of strain field in strained-Si MOSFET".MICRON 40.2(2009):274. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。