Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure
文献类型：期刊论文
| 作者 | Shi, L ; Shang, DS ; Sun, JR ; Shen, BG |
| 刊名 | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 4期号:12页码:344 |
| 关键词 | RESISTIVE SWITCHING MEMORIES OXIDE |
| ISSN号 | 1862-6254 |
| 通讯作者 | Shang, DS: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | Resistance memory devices based on a Gi/Mg doped ZnO/indium in oxide structure on a PET (polytheylene-re-rephitalate) flexible substrate were fabricated. The devices shows table bipolor resistance switching property and good flexibility. The high to low resistance ration was larger than 30 times, the endurane was more than 10(2)-cycle and there resistance retention was longer than 10(4)s. The resistance values of both high and low resistance states were not significantly changed by bendgin a radius (<= 20 mm) for more than 10(3) tunes. This resistance switching phenomenon of our devices can be explained by creation/rupture of metal conductive channels induced by electrochemical migration of Ci ions. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| 收录类别 | SCI |
| 资助信息 | National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Sciences; Beijing Municipal Nature Science Foundation |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38281]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shi, L,Shang, DS,Sun, JR,et al. Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2010,4(12):344. |
| APA | Shi, L,Shang, DS,Sun, JR,&Shen, BG.(2010).Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,4(12),344. |
| MLA | Shi, L,et al."Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 4.12(2010):344. |
入库方式： OAI收割
来源：物理研究所
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