中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope

文献类型:期刊论文

作者Yang, HQ ; Zhu, CX ; Gao, JN ; Xue, ZQ ; Pang, SJ
刊名SURFACE SCIENCE
出版日期1999
卷号429期号:1-3页码:L481
关键词SI(001) SURFACES PHASE-TRANSITION LOW-TEMPERATURE BIATOMIC STEPS BUCKLED DIMERS
ISSN号0039-6028
通讯作者Yang, HQ: Peking Univ, Dept Elect, Beijing 100871, Peoples R China.
中文摘要The growth process of microsize charged grains is investigated. Two growth mechanisms of collecting ion flow and coagulation are considered, in which the latter dominates and forms a monodisperse distribution of grain size. A simplified physical model has been suggested on the basis of energy equipartition theorem and a dynamic equation for the distribution function of grain size has been deduced. The preliminary computational results are in agreement with the above consideration on the growth mechanisms.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/38333]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Yang, HQ,Zhu, CX,Gao, JN,et al. Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope[J]. SURFACE SCIENCE,1999,429(1-3):L481.
APA Yang, HQ,Zhu, CX,Gao, JN,Xue, ZQ,&Pang, SJ.(1999).Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope.SURFACE SCIENCE,429(1-3),L481.
MLA Yang, HQ,et al."Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope".SURFACE SCIENCE 429.1-3(1999):L481.

入库方式: OAI收割

来源:物理研究所

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