Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope
文献类型:期刊论文
作者 | Yang, HQ ; Zhu, CX ; Gao, JN ; Xue, ZQ ; Pang, SJ |
刊名 | SURFACE SCIENCE
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出版日期 | 1999 |
卷号 | 429期号:1-3页码:L481 |
关键词 | SI(001) SURFACES PHASE-TRANSITION LOW-TEMPERATURE BIATOMIC STEPS BUCKLED DIMERS |
ISSN号 | 0039-6028 |
通讯作者 | Yang, HQ: Peking Univ, Dept Elect, Beijing 100871, Peoples R China. |
中文摘要 | The growth process of microsize charged grains is investigated. Two growth mechanisms of collecting ion flow and coagulation are considered, in which the latter dominates and forms a monodisperse distribution of grain size. A simplified physical model has been suggested on the basis of energy equipartition theorem and a dynamic equation for the distribution function of grain size has been deduced. The preliminary computational results are in agreement with the above consideration on the growth mechanisms. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/38333] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Yang, HQ,Zhu, CX,Gao, JN,et al. Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope[J]. SURFACE SCIENCE,1999,429(1-3):L481. |
APA | Yang, HQ,Zhu, CX,Gao, JN,Xue, ZQ,&Pang, SJ.(1999).Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope.SURFACE SCIENCE,429(1-3),L481. |
MLA | Yang, HQ,et al."Formation and atomic structures of double-layer steps on Si(100) surfaces studied by scanning tunneling microscope".SURFACE SCIENCE 429.1-3(1999):L481. |
入库方式: OAI收割
来源:物理研究所
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