Formation and charge control of a quantum dot by etched trenches and multiple gates
文献类型：期刊论文
| 作者 | Fu, Y ; Willander, M ; Wang, TH |
| 刊名 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
 |
| 出版日期 | 2002 |
| 卷号 | 74期号:6页码:741 |
| 关键词 | SINGLE-ELECTRON-TRANSISTOR COULOMB-BLOCKADE TRANSPORT MEMORY TEMPERATURE DESIGN OXIDE |
| ISSN号 | 0947-8396 |
| 通讯作者 | Fu, Y: Chinese Acad Sci, Inst Phys, 8 S 3rd St, Beijing 100080, Peoples R China. |
| 中文摘要 | We have fabricated a GaAs/InGaAs/AlGaAs-based single-electron transistor (SET) formed by etched trenches and multiple gates. Clear Coulomb-blockade oscillations have been observed when the gate biases are scanned. By self-consistently solving three-dimensional Schrodinger and Poisson equations, we have studied the energy-band structure and the carrier distribution of our SET. General agreement between numerical simulation results and measurement data has been obtained, thus indicating the effectiveness of our SET-device design as well as the necessity of a complete three-dimensional quantum-mechanical simulation. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38334]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Fu, Y,Willander, M,Wang, TH. Formation and charge control of a quantum dot by etched trenches and multiple gates[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2002,74(6):741. |
| APA | Fu, Y,Willander, M,&Wang, TH.(2002).Formation and charge control of a quantum dot by etched trenches and multiple gates.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,74(6),741. |
| MLA | Fu, Y,et al."Formation and charge control of a quantum dot by etched trenches and multiple gates".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 74.6(2002):741. |
入库方式： OAI收割
来源：物理研究所
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